2SB950A Просмотр технического описания (PDF) - Inchange Semiconductor
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2SB950A Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
2SB950A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ; IB= 0
-80
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A; IB=B -12mA
-2.0
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -5A; IB=B -20mA
-4.0
V
VBE(on) Base-Emitter On Voltage
IC= -3A ; VCE= -3V
-2.5
V
ICBO
Collector Cutoff Current
VCB= -100V ; IE= 0
-0.2 mA
ICEO
Collector Cutoff Current
VCE= -40V ; IB=B 0
-0.5 mA
IEBO
Emitter Cutoff Current
VEB= -5V ; IC= 0
-2.0 mA
hFE-1
DC Current Gain
IC= -0.5A ;VCE= -3V
1000
hFE-2
DC Current Gain
IC= -3A ; VCE= -3V
2000
10000
fT
Current-Gain—Bandwidth Product
IC=-0.5A;VCE= -10V;ftest=1MHz
20
MHz
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= -3A,IB1= -IB2= -12mA,
VCC= -50V
0.3
μs
2.0
μs
0.5
μs
hFE-2 Classifications
Q
P
2000-5000 4000-10000
isc Website：www.iscsemi.cn
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