2SB950A Просмотр технического описания (PDF) - Inchange Semiconductor
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2SB950A Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
2SB950A
DESCRIPTION
·High DC Current Gain-
: hFE= 2000(Min.)@IC= -3A
·High Speed Switching
·Complement to Type 2SD1276A
APPLICATIONS
·Designed for power amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-80
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-4
A
ICM
Collector Current-Peak
Collector Power Dissipation
@ Ta=25℃
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
-8
A
2
W
40
150
℃
-55~150
℃
isc Website：www.iscsemi.cn
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