HGTG40N60B3 Просмотр технического описания (PDF) - Fairchild Semiconductor
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HGTG40N60B3 Datasheet PDF : 8 Pages
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HGTG40N60B3
Typical Performance Curves (Unless Otherwise Specified) (Continued)
300
RG = 3Ω, L = 100µH, VCE = 480V
TJ = 150oC, VGE = 15V
250
TJ = 150oC, VGE = 10V
200
TJ = 25oC, VGE = 15V
150
TJ = 25oC, VGE = 15V
100
20
40
60
80
100
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
180
RG = 3Ω, L = 100µH, VCE = 480V
140
TJ = 150oC, VGE = 10V AND 15V
100
60
TJ = 25oC, VGE = 10V AND 15V
20
20
40
60
80
100
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
200
DUTY CYCLE = <0.5%, VCE = 10V
PULSE DURATION = 25µs
160
120
80
TC = 25oC
40
TC = 150oC
TC = -55oC
0
4
5
6
7
8
9
10
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
15
Ig(REF) = 3.255mA, RL = 7.5Ω, TC = 25oC
12
VCE = 400V
VCE = 600V
9
6
VCE = 200V
3
0
0
50
100
150
200
250
300
QG, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORM
14
FREQUENCY = 400kHz
12
CIES
10
8
6
4
COES
2
CRES
0
0
5
10
15
20
25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
©2004 Fairchild Semiconductor Corporation
HGTG40N60B3 Rev. B3
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