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HGTG40N60B3 Просмотр технического описания (PDF) - Fairchild Semiconductor

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производитель
HGTG40N60B3
Fairchild
Fairchild Semiconductor Fairchild
HGTG40N60B3 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
HGTG40N60B3
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNITS
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
td(ON)I
trI
td(OFF)I
tfI
EON
IGBT and Diode Both at TJ = 150oC
ICE = IC110
VCE = 0.8 BVCES
VGE = 15V
RG = 3
L = 100µH
Test Circuit (Figure 17)
-
47
-
ns
-
35
-
ns
-
285
375
ns
-
100
175
ns
-
1850
-
µJ
Turn-Off Energy (Note 1)
Thermal Resistance Junction To Case
EOFF
RθJC
-
2000
-
µJ
-
-
0.43
oC/W
NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include losses due
to diode recovery.
Typical Performance Curves (Unless Otherwise Specified)
100
VGE = 15V
80
60
PACKAGE LIMITED
40
20
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
250
TJ = 150oC, RG = 3, VGE = 15V
200
150
100
50
0
0
100 200 300 400 500 600 700
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
TJ = 150oC, RG = 3, L = 100µH, VCE = 480V
100
TC VGE
75oC 15V
75oC 10V
110oC 15V
110oC 10V
10
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD - PC) / (EON + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RØJC = 0.43oC/W, SEE NOTES
1
10
20
40
60 80 100
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
18
16
14
12
10
8
6
4
10
900
VCE = 360V, RG = 3, TJ = 125oC
800
ISC
700
600
500
tSC
400
300
11
12
13
14
VGE, GATE TO EMITTER VOLTAGE (V)
200
15
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
©2004 Fairchild Semiconductor Corporation
HGTG40N60B3 Rev. B3

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