HGTG40N60B3 Просмотр технического описания (PDF) - Fairchild Semiconductor

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HGTG40N60B3

70A, 600V, UFS Series N-Channel IGBT

Fairchild Semiconductor 

Data Sheet

HGTG40N60B3

November 2004

File Number

70A, 600V, UFS Series N-Channel IGBT

The HGTG40N60B3 is a MOS gated high voltage switching

device combining the best features of MOSFETs and bipolar

transistors. The device has the high input impedance of a

MOSFET and the low on-state conduction loss of a bipolar

transistor. The much lower on-state voltage drop varies only

moderately between 25oC and 150oC.

The IGBT is ideal for many high voltage switching

applications operating at moderate frequencies where low

conduction losses are essential, such as: AC and DC motor

controls, power supplies and drivers for solenoids, relays

and contactors.

Formerly Developmental Type TA49052.

Ordering Information

PART NUMBER

PACKAGE

BRAND

HGTG40N60B3

TO-247

G40N60B3

NOTE: When ordering, use the entire part number.

Symbol

C

Features

• 70A, 600V, TC = 25oC

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 100ns at TJ = 150oC

• Short Circuit Rating

• Low Conduction Loss

Packaging

JEDEC STYLE TO-247

E

C

G

COLLECTOR

(FLANGE)

G

E

FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,417,385

4,430,792

4,443,931

4,466,176

4,516,143

4,532,534

4,587,713

4,598,461

4,605,948

4,620,211

4,631,564

4,639,754

4,639,762

4,641,162

4,644,637

4,682,195

4,684,413

4,694,313

4,717,679

4,743,952

4,783,690

4,794,432

4,801,986

4,803,533

4,809,045

4,809,047

4,810,665

4,823,176

4,837,606

4,860,080

4,883,767

4,888,627

4,890,143

4,901,127

4,904,609

4,933,740

4,963,951

4,969,027

©2004 Fairchild Semiconductor Corporation

HGTG40N60B3 Rev. B3

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