14N37GVL Просмотр технического описания (PDF) - Fairchild Semiconductor

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14N37GVL

14A, 370V N-Channel, Logic Level, Voltage Clamping IGBTs

Fairchild Semiconductor 

HGT1S14N37G3VLS, HGTP14N37G3VL

Typical Performance Curves Unless Otherwise Specified (Continued)

360

TJ (oC)

350

-55

25

150

340

175

330

320

0

2

4

6

8

RG, GATE SERIES RESISTANCE (kΩ)

FIGURE 17. BREAKDOWN VOLTAGE vs SERIES GATE RESISTANCE

ICER = 10mA

10

100

0.5

0.2

10-1 0.1

0.05

0.02

0.01

10-2

SINGLE PULSE

10-5

10-4

t1

PD

DUTY FACTOR, D = t1 / t2

PEAK TJ = (PD X ZθJC X RθJC) + TC

t2

10-3

10-2

10-1

100

t1, RECTANGULAR PULSE DURATION (s)

FIGURE 18. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE

Test Circuits

3mH

PULSE

GEN

RG

G

C

DUT

E

VDD

FIGURE 19. INDUCTIVE SWITCHING TEST CIRCUIT

©2001 Fairchild Semiconductor Corporation

RG = 1kΩ G

5V

R

or LOAD

L

C

DUT

+

VDD

-

E

FIGURE 20. tON AND tOFF SWITCHING TEST CIRCUIT

HGT1S14N37G3VLS, HGTP14N37G3VL Rev. B

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