SMP75-8 Просмотр технического описания (PDF) - STMicroelectronics
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SMP75-8 Datasheet PDF : 8 Pages
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SMP75-8
Figure 4: On-state voltage versus on-state
current (typical values)
IT(A)
100
Tj=25°C
VT(V)
10
0
1
2
3
4
5
6
7
8
Figure 6: Relative variation of breakover
voltage versus junction temperature
VBO[Tj] / VBO[Tj=25°C]
1.08
1.07
1.06
1.05
1.04
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
Tj(°C)
0.94
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130
Figure 8: Variation of thermal impedance
junction to ambient versus pulse duration
(Printed circuit board FR4, SCu=35µm,
recommended pad layout)
Zth(j-a)/Rth(j-a)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-02
1.E-01
tp(s)
1.E+00
1.E+01
1.E+02
1.E+03
Figure 5: Relative variation of holding current
versus junction temperature
IH[Tj] / IH[Tj=25°C]
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
Tj(°C)
0.0
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130
Figure 7: Relative variation of leakage current
versus reverse voltage applied (typical values)
IR[Tj] / IR[Tj=25°C]
10000
1000
100
10
Tj(°C)
1
25
50
75
100
125
Figure 9: Relative variation of junction
capacitance versus reverse voltage applied
(typical values)
C [VR] / C [VR=2V]
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1
VR(V)
F =1MHz
VOSC = 1VRMS
Tj = 25°C
10
4/8
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