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STLC5445 Просмотр технического описания (PDF) - STMicroelectronics

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производитель
STLC5445
ST-Microelectronics
STMicroelectronics ST-Microelectronics
STLC5445 Datasheet PDF : 23 Pages
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Figure 6. Typical Protection Diagram (only channel 0 and 1 shown)
STLC5445
TIP
1µF
16PTC
16PTC
SM5908
22
22
BGND
WBP1
WB1
WA1
CHANNEL's 1 OUTPUT
DRIVER's STAGE
RING
2x
SM6T68A
WBAT
TIP
1µF
16PTC
16PTC
SM5908
22
22
WBAT
BGND
WBP0
WB0
WA0
CHANNEL's 0 OUTPUT
DRIVER's STAGE
RING
Note: The 1µF capacitors are required for output driver's stability
WBAT
D02TL549
FUNCTIONAL DESCRIPTION
WAn (n=0-3) Drivers (output pins).
Each WAn output can sink up to 140mA. When the ESn input is High and the activation request
is approved by the internal control circuitry, the respective WAn output is internally connected
to VBAT through a DMOS switch and the low side sensing resistor.
WBn (n=0-3) Resistor to BGND.
Each WBn output connects the wire B to ground through a 5W resistor used to perform the
longitudinal balance and the high side current sensing function.
WBPn (n=0-3) Protection diodes connection (see the block diagram at page 3).
Each channel of the STLC5445 has two internal, back to back connected diodes, whose clamp-
ing action can be used to protect the WBn outputs during lighting and power crossing events.
The diodes' clamping action is normally disabled and can be activated by connecting the WBPn
pin to BGND. In this case however, if the line current exceeds 57.5mA the forward drop across
the high side sensing resistor (and then across the diodes) reaches the diodes' conduction
threshold, strongly degrading the current limiting action and the longitudinal balance. For line
currents higher than 57.5mA external clamping elements must then be connected in place of
the internal diodes or in series to them in order to increase the clamping voltage value.
BGND
Battery ground.
DGND
Digital ground.
13/23

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