California Eastern Laboratories.

NEC's 1625 nm InGaAsP MQW FP PULSED LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION (120 mW MIN)

Maxim Integrated

-5V/-12V/-15V or Adjustable, High-Efficiency, Low IQ DC-DC Inverters

NEC => Renesas Technology

InGaAsP STRAINED DC-PBH LASER DIODE MODULE 1 625 nm TELEMETRY APPLICATION

Maxim Integrated

-5V/-12V/-15V or Adjustable, High-Efficiency, Low IQ DC-DC Inverters

Maxim Integrated

-5V/-12V/-15V or Adjustable, High-Efficiency, Low IQ DC-DC Inverters

Maxim Integrated

-5V/-12V/-15V or Adjustable, High-Efficiency, Low IQ DC-DC Inverters

Maxim Integrated

-5V/-12V/-15V or Adjustable, High-Efficiency, Low IQ DC-DC Inverters

Maxim Integrated

-5V/-12V/-15V or Adjustable, High-Efficiency, Low IQ DC-DC Inverters

Maxim Integrated

-5V/-12V/-15V or Adjustable, High-Efficiency, Low IQ DC-DC Inverters

California Eastern Laboratories.

InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 625 nm OTDR APPLICATION

Renesas Electronics

LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 625 nm OTDR APPLICATION DESCRIPTION

NEC => Renesas Technology

InGaAsP STRAINED DC-PBH LASER DIODE MODULE 1 625 nm TELEMETRY APPLICATION

NEC => Renesas Technology

InGaAsP STRAINED DC-PBH LASER DIODE MODULE 1 625 nm TELEMETRY APPLICATION

California Eastern Laboratories.

NEC's 1625 nm InGaAsP MQW FP PULSED LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION (120 mW MIN)