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T1G4020036-FSE
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TriQuint Semiconduct...
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Компоненты Описание
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TriQuint Semiconductor
T1G4020036-FSE
VB1
2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor
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T1G4020036-F
SE
TriQuint Semiconductor
T1G4020036-F
L
2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor
View
TriQuint Semiconductor
T1G4020036-F
LEVB1
2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor
View
TriQuint Semiconductor
T1G4020036-F
S
2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor
View
Qorvo, Inc
T1G4020036-F
S
DC – 3.5 GHz, 50 V, 2 x 200 W GaN RF Transistor
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Qorvo, Inc
T1G4020036-F
S-EVB1
DC – 3.5 GHz, 50 V, 2 x 200 W GaN RF Transistor
View
TriQuint Semiconductor
T1G4020036-F
SEVB1
2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor
View
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