DatasheetQ Logo
Electronic component search and free download site.Transistors,MosFET ,Diode,Integrated circuits

K522H1HACF-B050

   Даташит
соответствуя,
Like
начиная
N/A
концы
N/A
включая
N/A
производитель
итог
Samsung
производитель
Номер в каталоге
Компоненты Описание
View
Samsung
Samsung
2Gb (128M x16) NAND Flash + 1Gb (64M x16 ) Mobile DDR SDRAM
PDF
Match & Start : K522H1HACF-B050
YIXIN
Shenzhen Yixinwei Technology Co., Ltd.
K52
5.0 AMP SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
LSTD
Laird Tech Smart Technology
K52
Thermally Conductive Insulators
Toshiba
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (π-MOS)
Hitachi
Hitachi -> Renesas Electronics
Silicon N-Channel Junction FET
Toshiba
Toshiba
SILICON N-CHANNEL MOS TYPE FIELD EFFECT TRANSISTOR
LSTD
Laird Tech Smart Technology
Thermally Conductive Insulators
MTRONPTI
MTRONPTI
8 pin DIP, 5.0 Volt, CMOS/TTL, Clock Oscillator
LSTD
Laird Tech Smart Technology
Thermally Conductive Insulators
LSTD
Laird Tech Smart Technology
Thermally Conductive Insulators
MTRONPTI
MTRONPTI
8 pin DIP, 5.0 Volt, CMOS/TTL, Clock Oscillator
MTRONPTI
MTRONPTI
8 pin DIP, 5.0 Volt, CMOS/TTL, Clock Oscillator
CITC
Chip Integration Technology Corporation
5A Surface Mount Schottky Barrier Rectifiers
MTRONPTI
MTRONPTI
8 pin DIP, 5.0 Volt, CMOS/TTL, Clock Oscillator
MTRONPTI
MTRONPTI
8 pin DIP, 5.0 Volt, CMOS/TTL, Clock Oscillator
MTRONPTI
MTRONPTI
8 pin DIP, 5.0 Volt, CMOS/TTL, Clock Oscillator
1 2
Share Link: 

All Rights Reserved© datasheetq.com  [Privacy Policy ] [ Request Datasheet] [Contact Us]