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IRF359

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New Jersey Semicondu...
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NJSEMI
New Jersey Semiconductor
N-CHANNEL POWER MOSFETS
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Samsung
Samsung
N-CHANNEL POWER MOSFETS
IR
International Rectifier
Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = 400V, RDS(on) = 0.300 Ohm, ID = 14A
Iscsemi
Inchange Semiconductor
N-Channel MOSFET Transistor
Intersil
Intersil
15A, 400V, 0.300 Ohm, N-Channel Power MOSFET
Semelab
Semelab - > TT Electronics plc
N-CHANNEL POWER MOSFET
Samsung
Samsung
N-CHANNEL POWER MOSFETS
Fairchild
Fairchild Semiconductor
N-Channel Power MOSFETs, 15 A, 350 V/400 V
NJSEMI
New Jersey Semiconductor
N-CHANNEL POWER MOSFETS
Iscsemi
Inchange Semiconductor
N-Channel MOSFET Transistor
NJSEMI
New Jersey Semiconductor
N-CHANNEL POWER MOSFETS
Intersil
Intersil
15A, 400V, 0.300 Ohm, N-Channel Power MOSFET
Fairchild
Fairchild Semiconductor
N-Channel Power MOSFETs, 15 A, 350 V/400 V
Intersil
Intersil
15A, 400V, 0.300 Ohm, N-Channel Power MOSFET
Samsung
Samsung
N-CHANNEL POWER MOSFETS
NJSEMI
New Jersey Semiconductor
N-CHANNEL POWER MOSFETS
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