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Номер в каталоге
Компоненты Описание
F1012
Даташит
соответствуя,
Like
F1012
(2)
начиная
N/A
концы
N/A
включая
*8F1012*
(1)
*BF1012*
(1)
*F1012*
(9)
*F10120*
(6)
*F1012H*
(1)
*F1012S*
(1)
*SF1012*
(2)
производитель
итог
Cree, Inc
Ericsson
Glenair, Inc.
M/A-COM Technology S...
Tyco Electronics
Shenzhen Meipusen Se...
Mitsumi
Mospec Semiconductor
Motorola => Freescal...
Siemens AG
Sangdest Microelectr...
производитель
Номер в каталоге
Компоненты Описание
View
Siemens AG
B
F1012
W
SILICON N-CHANNEL MOSFET TETRODE
PDF
Siemens AG
B
F1012
S
Silicon N-Channel MOSFET Tetrode
PDF
Tyco Electronics
MR
F1012
0
Microwave Long Pulse Power Transistor
PDF
Ericsson
PT
F1012
5
135 Watts, 1.4–1.6 GHz GOLDMOS™ Field Effect Transistor
PDF
Motorola => Freescale
MR
F1012
0
Microwave Long Pulse Power Transistor
PDF
Sangdest Microelectronic (Nanjing) Co., Ltd
ST
F1012
0
SCHOTTKY RECTIFIER
PDF
Ericsson
PT
F1012
2
50 Watts WCDMA, 2.1–2.2 GHz GOLDMOS™ Field Effect Transistor
PDF
Ericsson
PT
F1012
0
120 Watts, 1.8–2.0 GHz GOLDMOS™ Field Effect Transistor
PDF
M/A-COM Technology Solutions, Inc.
MR
F1012
0
Microwave Long Pulse Power Silicon NPN Transistor 120W (peak), 960–1215MHz
PDF
Sangdest Microelectronic (Nanjing) Co., Ltd
ST
F1012
0C
SCHOTTKY RECTIFIER
PDF
Mitsumi
M
F1012
S-1
FOR GPS SYSTEM
PDF
Cree, Inc
CM
F1012
0D_
Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS
PDF
Mospec Semiconductor
MBR
F1012
0C
Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers
PDF
Sangdest Microelectronic (Nanjing) Co., Ltd
ST
F1012
0CR
SCHOTTKY RECTIFIER
PDF
Shenzhen Meipusen Semiconductor Co., Ltd
MS
F1012
0V1
1200V Silicon Carbide Diode
PDF
1
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