2SB1119 Просмотр технического описания (PDF) - SANYO -> Panasonic

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Компоненты Описание

производитель

2SB1119

PNP/NPN Epitaxial Planar Silicon Transistors

SANYO -> Panasonic 

Parameter

Collector-to-Emitter Saturation Voltage

Base-to-Emitter Saturation Voltage

Collector-to-Base Breakdown Voltage

Collector-to-Emitter Breakdown Voltage

Emitter-to-Base Breakdown Voltage

Output Capacitance

2SB1119/2SD1619

Symbol

Conditions

VCE(sat) IC=(–)500mA, IB=(–)50mA

VBE(sat)

V(BR)CBO

V(BR)CEO

V(BR)EBO

Cob

IC=(–)500mA, IB=(–)50mA

IC=(–)10µA, IE=0

IC=(–)1mA, RBE=∞

IE=(–)10µA, IC=0

VCB=(–)10V, f=1MHz

Ratings

Unit

min

typ max

0.1

0.3 V

(–0.15) (–0.7) V

(–)0.85 (–)1.2 V

(–)25

V

(–)25

V

(–)5

V

15

pF

(25)

pF

No.1785–2/3

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