2SB986 Просмотр технического описания (PDF) - SANYO -> Panasonic

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Компоненты Описание

производитель

2SB986

PNP/NPN Epitaxial Planar Silicon Darlington Transistors

SANYO -> Panasonic 

Parameter

Collector-to-Emitter Saturation Voltage

Base-to-Emitter Saturation Voltage

Collector-to-Base Breakdown Voltage

Collector-to-Emitter Breakdown Voltage

Emitter-to-Base Breakdown Voltage

2SB986/2SD1348

Symbol

Conditions

VCE(sat) IC=(–)2A, IB=(–)100mA, Pulse

VBE(sat)

V(BR)CBO

V(BR)CEO

V(BR)EBO

IC=(–)2A, IB=(–)100mA, Pulse

IC=(–)10µA, IE=0

IC=(–)1mA, RBE=∞

IE=(–)10µA IC=0

Ratings

Unit

min

typ max

0.19

0.5 V

(–0.35) (–0.7) V

(–)0.94 (–)1.2 V

(–)60

V

(–)50

V

(–)6

V

No.1245–2/4

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