BFG591 Просмотр технического описания (PDF) - Philips Electronics
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BFG591 Datasheet PDF : 12 Pages
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Philips Semiconductors
NPN 7 GHz wideband transistor
Product specification
BFG591
handbook−,2h0alfpage
dim
(dB)
−30
−40
−50
−60
−70
0
40
MGC797
80
120
IC (mA)
VCE = 12 V; Vo = 700 mV; f(p+q-r) = 793.25 MHz.
Fig.9 Intermodulation distortion as a function
of collector current; typical values.
handbook−,2h0alfpage
d2
(dB)
−30
−40
−50
−60
−70
0
40
MGC798
80
120
IC (mA)
VCE = 12 V; Vo = 316 mV; f(p+q) = 810 MHz.
Fig.10 Second order Intermodulation distortion as
a function of collector current; typical values.
1995 Sep 04
7
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