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BFG591 Просмотр технического описания (PDF) - Philips Electronics
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Компоненты Описание
производитель
BFG591
NPN 7 GHz wideband transistor
Philips Electronics
BFG591 Datasheet PDF : 12 Pages
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Philips Semiconductors
NPN 7 GHz wideband transistor
Product specification
BFG591
25
handbook, halfpage
gain
(dB)
20
15
10
5
0
0
40
MGC795
Gmax
GUM
80
120
IC (mA)
f = 900 MHz; V
CE
= 12 V.
Fig.6 Gain as a function of collector current;
typical values.
10
handbook, halfpage
gain
(dB)
8
6
4
2
0
0
40
MGC794
Gmax
GUM
80
120
IC (mA)
f = 2 GHz; V
CE
= 12 V.
Fig.7 Gain as a function of collector current;
typical values.
50
hand
g
bo
a
o
in
k, halfpage
(dB)
40
G UM
MSG
30
20
10
0
10
10
2
MGC796
G
max
10
3
10
4
f (MHz)
I
C
= 70 mA; V
CE
= 12 V.
Fig.8 Gain as a function of frequency;
typical values.
1995 Sep 04
6
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