BFG591 Просмотр технического описания (PDF) - Philips Electronics
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BFG591 Datasheet PDF : 12 Pages
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Philips Semiconductors
NPN 7 GHz wideband transistor
Product specification
BFG591
CHARACTERISTICS
Tj = 25 °C (unless otherwise specified).
SYMBOL
PARAMETER
V(BR)CBO
V(BR)CES
V(BR)EBO
ICBO
hFE
Cre
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector-base leakage current
DC current gain
feedback capacitance
fT
transition frequency
GUM
maximum unilateral power gain;
note 1
s21 2
Vo
insertion power gain
output voltage
CONDITIONS
IC = 0.1 mA; IE = 0
IC = 10 mA; IB = 0
IE = 0.1 mA; IC = 0
IE = 0; VCB = 10 V
IC = 70 mA; VCE = 8 V
IB = Ib = 0; VCE = 12 V;
f = 1 MHz
IC = 70 mA; VCE = 12 V;
f = 1 GHz
IC = 70 mA; VCE = 12 V;
f = 900 MHz; Tamb = 25 °C
IC = 70 mA; VCE = 12 V;
f = 2 GHz; Tamb = 25 °C
IC = 70 mA; VCE = 12 V;
f = 1 GHz; Tamb = 25 °C
note 2
MIN.
−
−
−
−
60
−
TYP.
−
−
−
−
90
0.7
MAX. UNIT
20
V
15
V
3
V
100 nA
250
−
pF
−
7
−
GHz
−
13
−
dB
−
7.5
−
dB
−
12
−
dB
−
700 −
mV
Notes
1. GUM is the maximum unilateral power gain, assuming s12 is zero.
2. dim = 60 dB (DIN45004B);
GUM
=
10
log -(---1-----–------s---1--1-----2s--)-2---1-(--1-2----–------s---2---2----2---)--
dB.
Vp = Vo; Vq = Vo −6 dB; Vr = Vo −6 dB;
fp = 795.25 MHz; fq = 803.25 MHz; fr = 803.25 MHz; measured at f(p+q-r) = 793.25 MHz.
1995 Sep 04
4
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