BFG591 Просмотр технического описания (PDF) - Philips Electronics

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BFG591

NPN 7 GHz wideband transistor

Philips Electronics 

Philips Semiconductors

NPN 7 GHz wideband transistor

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

VCBO

VCEO

VEBO

IC

Ptot

Tstg

Tj

collector-base voltage

collector-emitter voltage

emitter-base voltage

collector current (DC)

total power dissipation

storage temperature

junction temperature

open emitter

open base

open collector

up to Ts = 80 °C; note 1

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-s

thermal resistance from junction to

soldering point

CONDITIONS

note 1

Note to the Limiting values and Thermal characteristics

1. Ts is the temperature at the soldering point of the collector pin.

Product specification

BFG591

MIN.

−

−

−

−

−

−65

−

MAX.

20

15

3

200

2

+150

150

UNIT

V

V

V

mA

W

°C

°C

VALUE

35

UNIT

K/W

1995 Sep 04

3

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