BFQ135 Просмотр технического описания (PDF) - Philips Electronics
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BFQ135 Datasheet PDF : 12 Pages
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Philips Semiconductors
NPN 6.5 GHz wideband transistor
Product specification
BFQ135
handbook, full pagewidth
VBB
input
75 Ω
, 10nF
10 kΩ
10 nF
L1
L5
L2 10 nF
240 Ω
L3
DUT
L4
L6
1 pF
33 33
Ω
Ω
10 nF
VCC
4.7 µF
10 nF
output
75 Ω
1 pF
MEA260
L1 = 8 nH.
L2 = 15 nH (2 turns copper wire, internal diameter 2 mm).
L3 = 10 nH (2 turns copper wire, internal diameter 1.5 mm).
L5: Lp = 21 mm; Rc = 75 Ω.
L6: Lp = 16 mm; Rc = 75 Ω.
Fig.2 Intermodulation distortion test circuit.
handboo1k,6h0alfpage
h FE
120
80
MBB294
8
handbook, halfpage
fT
(GHz)
6
4
2
MBB296
40
0
40
80
120
160
I C (mA)
0
0
40
80
120
160
IC (mA)
VCE = 18 V; Tamb = 25 °C.
Fig.3 DC current gain as a function of collector
current; typical values.
1997 Nov 07
VCE = 18 V; f = 1 GHz; Tamb = 25 °C.
Fig.4 Transition frequency as a function of
collector current; typical values.
5
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