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BFQ270 Просмотр технического описания (PDF) - Philips Electronics
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Компоненты Описание
производитель
BFQ270
NPN 6 GHz wideband transistor
Philips Electronics
BFQ270 Datasheet PDF : 12 Pages
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Philips Semiconductors
NPN 6 GHz wideband transistor
Product specification
BFQ270
14
handbook, halfpage
Ptot
(W)
12
MRA747
8
4
0
0
50
100
150
200
Tcase (oC)
Fig.4 Power derating curve.
150
handbook, halfpage
hFE
100
MRA746
50
0
0
100
200
300
400
500
IC (mA)
V
CE
= 18 V; T
j
= 25
°
C.
Fig.5 DC current gain as a function of collector
current.
handbook, h
5
alfpage
Cre
(pF)
4
MRA736
3
2
1
0
0
4
8
12
16
20
VCB (V)
i
c
= 0; f = 1 MHz.
Fig.6 Feedback capacitance as a function of
collector-base voltage.
September 1995
handbook, h
8
alfpage
fT
(GHz)
6
4
MRA741
VCE
=
18 V
12 V
2
0
0
100
200
300
400
500
IC (mA)
f = 1 GHz; T
amb
= 25
°
C.
Fig.7 Transition frequency as a function of
collector current.
6
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