SDE2526-5 Просмотр технического описания (PDF) - Infineon Technologies

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SDE2526-5

Nonvolatile Memory 2-Kbit E2PROM with I2C Bus Interface with Extended Temperature Range

Infineon Technologies 

SDE 2526

Absolute Maximum Ratings

Parameter

Supply voltage

Input voltage

Storage temperature range

Thermal resistance P-DIP-8-4

Junction - air

P-DSO-8-1

Operating Range

Supply voltage

Ambient temperature

Symbol

Limit Values

Unit

VDD

– 0.3 to 6

V

VI

– 0.3 to 6

V

Tstg

– 55 to 125

°C

R th JA

100

K/W

170

K/W

VDD

4.75 to 5.25

V

TA

– 40 to 110

°C

DC Characteristics

Parameter

Symbol

Supply voltage

VDD

Supply current

IDD

Inputs SCL/SDA

Low level

VIL

High level

VIH

High current; VIH = VDD max

IH

Output SDA

L-current; VQL = 0.4 V

IQL

Leakage current; VQL = VDD max

IQH

Inputs

L-level

VIL

H-level

VIH

H-current

IIH

Clock frequency

fSCL

Reprogramming duration (erase and write)

tprog

Input capacitance

CI

Full erase duration (test mode full erase)

ter

Limit Values

Unit

min. typ. max.

4.75 –

5.25 V

–

–

20 mA

–

–

3.0 –

–

–

1.5 V

VDD V

10 mA

–

–

3.0 mA

–

–

10 µA

–

–

4.5 –

–

–

–

–

–

15

–

–

–

–

0.2 V

VDD V

100 µA

100 kHz

20 ms

10 pF

20 ms

Semiconductor Group

87

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