DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

Q67000-S252 Просмотр технического описания (PDF) - Siemens AG

Номер в каталоге
Компоненты Описание
производитель
Q67000-S252
Siemens
Siemens AG Siemens
Q67000-S252 Datasheet PDF : 6 Pages
1 2 3 4 5 6
BSS 149
Electrical Characteristics (cont’d)
at Tj = 25 ˚C, unless otherwise specified.
Parameter
Reverse Diode
Continuous reverse drain current
TA = 25 ˚C
Pulsed reverse drain current
TA = 25 ˚C
Diode forward on-voltage
IF = 0.7 A, VGS = 0
Symbol
min.
IS
ISM
VSD
Values
Unit
typ.
max.
A
0.35
1.05
V
0.8
1.2
VGS(th) Grouping
Symbol
Range of VGS(th)
Threshold voltage selected in groups 1):
P
R
S
T
U
V
W
VGS(th)
VGS(th)
1) A specific group cannot be ordered seperately.
Each reel only contains transistors from one group.
Limit Values Unit
min. max.
0.15 V
– 0.95 – 0.80 V
– 1.08 – 0.93 V
– 1.21 – 1.06 V
– 1.34 – 1.19 V
– 1.47 – 1.32 V
– 1.60 – 1.45 V
– 1.73 – 1.58 V
Test Condition
VDS1 = 0.2 V
VDS2 = 3 V;
ID = 1 mA
Semiconductor Group
3

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]