Philips Semiconductors
N-channel silicon junction FETs
Product specification
J108; J109; J110
FEATURES
• High speed switching
• Interchangeability of drain and source connections
• Low RDSon at zero gate voltage (<8 Ω for J108).
APPLICATIONS
• Analog switches
• Choppers and commutators.
DESCRIPTION
N-channel symmetrical silicon junction field-effect
transistors in a TO-92 package.
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
PINNING - TO-92
PIN
SYMBOL
1
g
2
s
3
d
DESCRIPTION
gate
source
drain
1
handbook, halfpage2
3
d
g
s
MAM197
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VDS
VGSoff
drain-source voltage
gate-source cut-off voltage
J108
J109
J110
IDSS
drain current
J108
J109
J110
Ptot
total power dissipation
CONDITIONS
ID = 1 µA; VDS = 5 V
VGS = 0; VDS = 5 V
up to Tamb = 50 °C
MIN. MAX. UNIT
−
±25 V
−3
−10 V
−2
−6
V
−0.5 −4
V
80
−
mA
40
−
mA
10
−
mA
−
400 mW
1996 Jul 30
2