ITF86182SK8T Просмотр технического описания (PDF) - Intersil

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Компоненты Описание

производитель

ITF86182SK8T

11A, 30V, 0.0115 Ohm, P-Channel, Logic Level, Power MOSFET

Intersil 

Test Circuits and Waveforms

ITF86182SK8T

VGS

Ig(REF)

VDS

RL

DUT

-

VDD

+

Qgs

0

Qg(TH)

VGS= -1V

-VGS

VDD

0

Ig(REF)

Qgd

VDS

Qg(-5)

VGS= -5V

Qg(TOT)

VGS= -10V

FIGURE 16. GATE CHARGE TEST CIRCUIT

FIGURE 17. GATE CHARGE WAVEFORMS

0V

-VGS

VGS

RGS

RL

VDS

-

+

DUT

FIGURE 18. SWITCHING TIME TEST CIRCUIT

tON

td(ON)

tr

0

10%

VDS

90%

0

10%

VGS

50%

PULSE WIDTH

tOFF

td(OFF)

tf

10%

90%

50%

90%

FIGURE 19. SWITCHING TIME WAVEFORM

Thermal Resistance vs. Mounting Pad Area

The maximum rated junction temperature, TJM, and the

thermal resistance of the heat dissipating path determines

the maximum allowable device power dissipation, PDM, in an

application. Therefore the application’s ambient temperature,

TA (oC), and thermal resistance RθJA (oC/W) must be

reviewed to ensure that TJM is never exceeded. Equation 1

mathematically represents the relationship and serves as

the basis for establishing the rating of the part.

PDM = (---T----J-R--M---θ----J–---A-T----A-----)

(EQ. 1)

In using surface mount devices such as the SO8 package,

the environment in which it is applied will have a significant

influence on the part’s current and maximum power

dissipation ratings. Precise determination of PDM is complex

and influenced by many factors:

1. Mounting pad area onto which the device is attached and

whether there is copper on one side or both sides of the

board.

2. The number of copper layers and the thickness of the

board.

3. The use of external heat sinks.

4. The use of thermal vias.

5. Air flow and board orientation.

6. For non steady state applications, the pulse width, the

duty cycle and the transient thermal response of the part,

the board and the environment they are in.

6

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