ITF86182SK8T Просмотр технического описания (PDF) - Intersil

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производитель

ITF86182SK8T

11A, 30V, 0.0115 Ohm, P-Channel, Logic Level, Power MOSFET

Intersil 

ITF86182SK8T

Typical Performance Curves (Continued)

-300

-100

SINGLE PULSE

TJ

TA

=

=

MAX RATED

25oC

RθJA = 50oC/W

100µs

-10

OPERATION IN THIS

AREA MAY BE

LIMITED BY rDS(ON)

-1

1ms

10ms

-1

-10

VDS, DRAIN TO SOURCE VOLTAGE (V)

-100

FIGURE 5. FORWARD BIAS SAFE OPERATING AREA

-40

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

VDD = 15V

-30

-20

-10

0

-1

TJ = 150oC

TJ = 25oC

TJ = -55oC

-1.5

-2.0

-2.5

-3.0

VGS, GATE TO SOURCE VOLTAGE (V)

FIGURE 6. TRANSFER CHARACTERISTICS

-40

VGS = -10V

VGS = -5V

-30

-20

VGS = -4.5V

VGS = -3.5V

-10

0

0

VGS = -3V

TA = 25oC

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

-0.2

-0.4

-0.6

-0.8

-1

VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 7. SATURATION CHARACTERISTICS

25

ID = -11A

20

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

15

ID = -2A

10

5

-2

-4

-6

-8

-10

VGS, GATE TO SOURCE VOLTAGE (V)

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

1.6

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

1.4

1.2

VGS = -10V, ID = -11A

1.0

0.8

0.6

-80

-40

0

40

80

120

160

TJ, JUNCTION TEMPERATURE (oC)

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

1.2

VGS = VDS, ID = -250µA

1.0

0.8

0.6

0.4

-80

-40

0

40

80

120

160

TJ, JUNCTION TEMPERATURE (oC)

FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs

JUNCTION TEMPERATURE

4

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