RF1S9640 Просмотр технического описания (PDF) - Intersil
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производитель
RF1S9640 Datasheet PDF : 7 Pages
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IRF9640, RF1S9640SM
Typical Performance Curves Unless Otherwise Specified (Continued)
1.15
ID = 250µA
1.10
1.05
1.00
0.95
0.90
0.85
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
10
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
8
6
TJ = -55oC
TJ = 25oC
TJ = 125oC
4
2
0
-10
-20
-30
-40
-50
I D, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
0
2000
1600
1200
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
CISS
800
400
00
COSS
CRSS
10
20
30
40
50
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
-100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TJ = 150oC
-10
TJ = 25oC
-1.0
-0.1
-0.4 -0.6 -0.8
-1.0 -1.2 -1.4
-1.6 -1.8
VSD, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
ID = -11A
-5
VDS = -40V
-10
VDS = -100V
VDS = -160V
0
20
40
60
80
Qg(TOT), Total GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
4-37
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