IRF9640 Просмотр технического описания (PDF) - Intersil

Номер в каталоге

Компоненты Описание

производитель

IRF9640

11A, 200V, 0.500 Ohm, P-Channel Power MOSFETs

Intersil 

IRF9640, RF1S9640SM

Typical Performance Curves Unless Otherwise Specified (Continued)

-100

10µs

100µs

-10

1ms

OPERATION IN THIS

-1

AREA MAY BE

LIMITED BY rDS(ON)

TC = 25oC

TJ = MAX RATED

SINGLE PULSE

-0.1-1

-10

-100

10ms

100ms

DC

VDS, DRAIN TO SOURCE VOLTAGE (V)

-1000

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA

-20

PULSE DURATION = 80µs

VGS = -10V

DUTY CYCLE = 0.5% MAX

-16

VGS = -9V

VGS = -8V

VGS = -7V

- 12

VGS = -6V

-8

-4

VGS = -5V

VGS = -4V

0

0

-2

-4

-6

-8

-10

VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 6. SATURATION CHARACTERISTICS

-50

-40

-30

-20

-10

0

0

VGS = -11V

VGS = -10V

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

VGS = -9V

VGS = -8V

VGS = -7V

VGS = -6V

VGS = -5V

VGS = -4V

-10

-20

-30

-40

-50

VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 5. OUTPUT CHARACTERISTICS

100 VDS ≥ I D(ON) x rDS(ON)

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

-10

-1.0

125oC

25oC

-55oC

-0.1

0

-2

-4

-6

-8

-10

VGS, GATE TO SOURCE VOLTAGE (V)

FIGURE 7. TRANSFER CHARACTERISTICS

0.8 5µs PULSE TEST

0.7

VGS = -10V

0.6

0.5

0.4

0.3

VGS = - 20V

0.2

0

0

-15

-30

-45

-60

-75

ID, DRAIN CURRENT (A)

NOTE: Heating effect of 5µs pulse is minimal.

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

2.5

VGS = -10V, ID = -6A

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

2.0

1.5

1.0

0.5

0.0

-40

0

40

80

120

160

TJ, JUNCTION TEMPERATURE (oC)

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

4-36

Share Link: