IRF9640 Просмотр технического описания (PDF) - Intersil

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производитель

IRF9640

11A, 200V, 0.500 Ohm, P-Channel Power MOSFETs

Intersil 

IRF9640, RF1S9640SM

Source to Drain Diode Specifications

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNITS

Continuous Source to Drain Current

Pulse Source to Drain Current

(Note 3)

ISD

ISDM

Modified MOSFET Sym-

bol Showing the Integral

Reverse

P-N Junction Diode

G

-

-

-11

A

D

-

-

-44

A

S

Source to Drain Diode Voltage (Note 2)

VSD

TJ = 25oC, ISD = -11A, VGS = 0V (Figure 13)

-

-

-1.5

V

Reverse Recovery Time

trr

TJ = 150oC, ISD = -11A, dISD/dt = 100A/µs

-

300

-

ns

Reverse Recovery Charge

QRR

TJ = 150oC, ISD = -11A, dISD/dt = 100A/µs

-

1.9

-

µC

NOTES:

2. Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive Rating: Pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD = 50V, starting TJ = 25oC, L = 9.8mH, RG = 25Ω, peak IAS = 11A. See Figures 15, 16.

Typical Performance Curves Unless Otherwise Specified

1.2

1.0

0.8

0.6

0.4

0.2

0

0

50

100

150

TC, CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

-15

-10

-5

0

0

50

100

150

TC, CASE TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

1

0.5

0.2

0.1

0.1

0.05

0.02

0.01

SINGLE PULSE

0.0110-5

10-4

PDM

t1

t2

NOTES:

DUTY FACTOR: D = t1/t2

PEAK TJ = PDM x ZθJC x RθJC + TC

10-3

10-2

10-1

t1, RECTANGULAR PULSE DURATION (s)

1

10

FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE

4-35

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