IRF452 Просмотр технического описания (PDF) - Intersil

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производитель

IRF452

13A, 500V, 0.400 Ohm, N-Channel Power MOSFET

Intersil 

IRF450

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

IRF450

500

500

13

8.1

52

±20

125

1.2

860

-55 to 150

300

260

UNITS

V

V

A

A

A

V

W

W/oC

mJ

oC

oC

oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

1. TJ = 25oC to 125oC.

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

Drain to Source Breakdown Voltage

Gate to Threshold Voltage

Gate to Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current (Note 2)

Drain to Source On Resistance (Note 2)

Forward Transconductance (Note 2)

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

(Gate to Source + Gate to Drain)

Gate to Source Charge

Gate to Drain “Miller” Charge

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Internal Drain Inductance

BVDSS VGS = 0V, ID = 250µA (Figure 10)

500

VGS(TH) VGS = VDS, ID = 250µA

2.0

IGSS VGS = ±20V

-

IDSS VDS = Rated BVDSS, VGS = 0V

-

VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC

-

ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V (Figure 7) 13

rDS(ON) VGS = 10V, ID = 7.2A (Figures 8, 9)

-

gfs

VDS ≥ 50V, ID = 7.2A (Figure 12)

6.0

td(ON) VDD = 250V, ID ≈ 13A, RG = 6.2Ω, RL = 19Ω

-

tr

(Figures 17, 18) MOSFET SwitchingTimes are

Essentially Independent of Operating

-

td(OFF) Temperature

-

tf

-

Qg(TOT) VGS = 10V, ID = 13A, VDS = 0.8 x Rated BVDSS,

-

Ig(REF) = 1.5mA (Figures 14, 19, 20) Gate Charge

Qgs

is Essentially Independent of Operating

Temperature

-

Qgd

-

CISS VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11)

-

COSS

-

CRSS

-

LD

Measured between the Modified MOSFET

-

Contact Screw on the Symbol Showing the

Flange that is Closer to Internal Devices

Source and Gate Pins Inductances

and the Center of Die

D

Internal Source Inductance

LS

Measured from the

Source Lead, 6mm

LD

-

(0.25in) from the Flange G

to Source Bonding Pad

LS

Thermal Resistance Junction to Case

Thermal Resistance Junction to Ambient

RθJC

RθJA

Free Air Operation

S

-

-

TYP MAX UNITS

-

-

V

-

4.0

V

-

±100

nA

-

25

µA

-

250

µA

-

-

A

0.3 0.400

Ω

11

-

S

20

27

ns

40

66

ns

72

100

ns

35

60

ns

85

130

nC

12

-

nC

42

-

nC

1800

-

pF

400

-

pF

100

-

pF

5.0

-

nH

12.5

-

nH

-

0.83 oC/W

-

30

oC/W

2

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