NDS351N Просмотр технического описания (PDF) - Fairchild Semiconductor
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NDS351N Datasheet PDF : 6 Pages
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Typical Electrical Characteristics (continued)
1.15
I D = 250µA
1.1
1.05
1
0.95
0.9
-50
-25
0
25
50
75
100 125 150
TJ , JUNCTION TEMPERATURE (°C)
Figure 7. Breakdown Voltage Variation with
Temperature
5
2
V GS = 0V
1
0.5
0.2 T J= 125°C
0.1
25°C
0.01
-55°C
0.001
0.3
0.6
0.9
1.2
VSD , BODY DIODE FORWARD VOLTAGE (V)
Figure 8. Body Diode Forward Voltage Variation
with Current and Temperature
300
200
C iss
100
C oss
50
30
20
10
0.1
f = 1 MHz
VGS = 0V
C rss
0.2
0.5
1
2
5
10
VDS , DRAIN TO SOURCE VOLTAGE (V)
20 30
Figure 9. Capacitance Characteristics
10
IDS = 1.1A
8
VDS= 5V
6
4
2
0
0
1
2
3
Qg , GATE CHARGE (nC)
Figure 10. Gate Charge Characteristics
10V
4
VIN
VGS
RGEN
G
VDD
RL
D
V OUT
DUT
S
t d(on)
t on
tr
90%
t d(off)
toff
tf
90%
Output, Vout
Input, Vin
10%
10%
50%
10%
90% Inverted
50%
Pulse Width
Figure 11. Switching Test Circuit
Figure 12. Switching Waveforms
NDS351N Rev. E2
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