PHN103 Просмотр технического описания (PDF) - Philips Electronics

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Компоненты Описание

производитель

PHN103

N-channel enhancement mode MOS transistor

Philips Electronics 

Philips Semiconductors

N-channel enhancement mode

MOS transistor

Product specification

PHN103

1.2

handbook, halfpage

k

1.1

MGG338

1

0.9

0.8

0.7

0.6

−100 −50

0

50

100

150

Tj (°C)

k = V-----GV----SG---t-Sh---t--ha---t--a--2-t--5--T--°--j-C---

VGSth at VDS = VGS; ID = 1 mA.

Fig.12 Temperature coefficient of gate-source

threshold voltage; typical values.

1.6

handbook, halfpage

k

1.4

1.2

MGG339

(1)

(2)

1

0.8

0.6

0.4

−100 −50

0

50

100

150

Tj (°C)

k = R-----D-R---S-D--o--S-n--o--a-n---t--a-2--t-5---T---°-j--C---

(1) RDSon at VGS = 10 V; ID = 5.5 A.

(2) RDSon at VGS = 4.5 V; ID = 2.75 A.

Fig.13 Temperature coefficient of drain-source

on-state resistance; typical values.

1997 Jun 20

9

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