PHN103 Просмотр технического описания (PDF) - Philips Electronics

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производитель

PHN103

N-channel enhancement mode MOS transistor

Philips Electronics 

Philips Semiconductors

N-channel enhancement mode

MOS transistor

Product specification

PHN103

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

VDS

VGS

ID

IDM

Ptot

PARAMETER

drain-source voltage (DC)

gate-source voltage (DC)

drain current (DC)

peak drain current

total power dissipation

Tstg

storage temperature

Tj

operating junction temperature

Source-drain diode

IS

source current (DC)

ISM

peak pulsed source current

CONDITIONS

Ts = 80 °C; note 1

note 2

Ts = 80 °C

Tamb = 25 °C; note 3

Tamb = 25 °C; note 4

MIN.

−

−

−

−

−

−

−

−65

−65

MAX.

30

±20

8.5

35

4

2.7

1.15

+150

+150

Ts = 80 °C

note 2

−

5

−

20

Notes

1. Ts is the temperature at the soldering point of the drain lead.

2. Pulse width and duty cycle limited by maximum junction temperature.

3. Device mounted on printed-circuit board with an Rth a-tp (ambient to tie-point) of 27.5 K/W.

4. Device mounted on printed-circuit board with an Rth a-tp (ambient to tie-point) of 90 K/W.

UNIT

V

V

A

A

W

W

W

°C

°C

A

A

THERMAL CHARACTERISTICS

SYMBOL

Rth j-s

PARAMETER

thermal resistance from junction to soldering point

VALUE

17.5

UNIT

K/W

1997 Jun 20

3

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