2N7002KW Просмотр технического описания (PDF) - Fairchild Semiconductor

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2N7002KW

N-Channel Enhancement Mode Field Effect Transistor

Fairchild Semiconductor 

May 2011

2N7002KW

N-Channel Enhancement Mode Field Effect Transistor

Features

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Ultra-Small Surface Mount Package

• Pb Free/RoHS Compliant

• ESD HBM=1000V as per JESD22 A114 and ESD CDM=1500V as per JESD22 C101

D

S

G SOT-323

Marking : 7KW

Absolute Maximum Ratings * TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

VDSS Drain-Source Voltage

60

V

VGSS Gate-Source Voltage

±20

V

ID

Maximum Drain Current

- Continuous

310

mA

TJ = 100°C

195

mA

- Pulsed

1.2

A

TJ

TSTG

Operating Junction Temperature Range

Storage Temperature Range

-55 to +150

°C

-55 to +150

°C

* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.

Thermal Characteristics

Symbol

Parameter

Value

PD

Total Device Dissipation

300

Derating above TA = 25°C

2.4

RθJA Thermal Resistance, Junction to Ambient *

410

* Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size

Units

mW

mW/°C

°C/W

© 2011 Fairchild Semiconductor Corporation

2N7002KW Rev. A0

1

www.fairchildsemi.com

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