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STB7NC80Z-1

N-CHANNEL 800V - 1.3Ω - 6.5A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH™III MOSFET

STMicroelectronics 

STP7NC80Z - STP7NC80ZFP

STB7NC80Z - STB7NC80Z-1

N-CHANNEL 800V - 1.3Ω - 6.5A TO-220/FP/D2PAK/I2PAK

Zener-Protected PowerMESH™III MOSFET

TYPE

VDSS

RDS(on)

ID

STP7NC80Z

STP7NC80ZFP

STB7NC80Z

STB7NC80Z-1

800 V

800 V

800 V

800 V

< 1.5 Ω

< 1.5 Ω

< 1.5 Ω

< 1.5 Ω

6.5 A

6.5 A

6.5 A

6.5 A

s TYPICAL RDS(on) = 1.3Ω

s EXTREMELY HIGH dv/dt AND CAPABILITY

GATE TO - SOURCE ZENER DIODES

s 100% AVALANCHE TESTED

s VERY LOW GATE INPUT RESISTANCE

s GATE CHARGE MINIMIZED

DESCRIPTION

The third generation of MESH OVERLAY™ Power

MOSFETs for very high voltage exhibits unsur-

passed on-resistance per unit area while integrating

back-to-back Zener diodes between gate and

source. Such arrangement gives extra ESD capabil-

ity with higher ruggedness performance as request-

ed by a large variety of single-switch applications.

TO-220

3

1

D2PAK

3

2

1

TO-220FP

123

I2PAK

(Tabless TO-220)

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

s SINGLE-ENDED SMPS IN MONITORS,

COMPUTER AND INDUSTRIAL APPLICATION

s WELDING EQUIPMENT

ORDERING INFORMATION

SALES TYPE

MARKING

STP7NC80Z

P7NC80Z

STP7NC80ZFP

P7NC80ZFP

STB7NC80ZT4

B7NC80Z

STB7NC80Z-1

B7NC80Z

May 2003

PACKAGE

TO-220

TO-220FP

D2PAK

I2PAK

PACKAGING

TUBE

TUBE

TAPE & REEL

TUBE

1/13

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