STL34NF06 Просмотр технического описания (PDF) - STMicroelectronics

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STL34NF06

N-CHANNEL 60V - 0.024Ω - 34A PowerFLAT™ LOW GATE CHARGE STripFET™II MOSFET

STMicroelectronics 

STL34NF06

THERMAL DATA

Rthj-case Thermal Resistance Junction-case Max

Rthj-pcb (#) Thermal Resistance Junction-ambient Max

(*) When mounted on 1inch² FR4 Board, 2oz of Cu, t ≤ 10 sec.

1.8

31.2

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

Symbol

Parameter

Test Conditions

Min. Typ. Max.

V(BR)DSS Drain-source

ID = 250 µA, VGS = 0

60

Breakdown Voltage

IDSS

Zero Gate Voltage

VDS = Max Rating

1

Drain Current (VGS = 0)

VDS = Max Rating, TC = 125 °C

10

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 20V

±100

°C/W

°C/W

Unit

V

µA

µA

nA

ON (1)

Symbol

VGS(th)

RDS(on)

Parameter

Gate Threshold Voltage

Static Drain-source On

Resistance

Test Conditions

VDS = VGS, ID = 250µA

VGS = 10V, ID = 17A

Min. Typ. Max. Unit

2

V

0.024 0.028

Ω

DYNAMIC

Symbol

Parameter

Test Conditions

gfs (1) Forward Transconductance VDS = 30 V , ID = 17 A

Ciss

Input Capacitance

VDS = 25V, f = 1 MHz, VGS = 0

Coss

Output Capacitance

Crss

Reverse Transfer

Capacitance

1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

Min.

Typ.

TBD

920

225

80

Max.

Unit

S

pF

pF

pF

2/6

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