STD35NF06LT4 Просмотр технического описания (PDF) - STMicroelectronics

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производитель

STD35NF06LT4

N-channel 60 V, 0.014 Ω, 35 A STripFET™ II Power MOSFET in a DPAK package

STMicroelectronics 

Test circuit

3

Test circuit

STD35NF06L

Figure 13. Switching times test circuit for

resistive load

Figure 14. Gate charge test circuit

VDD

VD

VGS

RG

PW

RL

2200

μF

D.U.T.

3.3

μF VDD

12V

47kΩ

1kΩ

100nF

Vi=20V=VGMAX

2200

μF

IG=CONST

2.7kΩ

100Ω

D.U.T.

VG

47kΩ

PW

AM01468v1

1kΩ

AM01469v1

Figure 15. Test circuit for inductive load

Figure 16. Unclamped Inductive load test

switching and diode recovery times

circuit

G

25 Ω

A

D

D.U.T.

S

B

AA

FAST

DIODE

L=100μH

B

3.3

B

μF

D

G

RG

S

1000

μF

VDD

Vi

L

VD

2200

3.3

μF

μF

VDD

ID

D.U.T.

Pw

AM01470v1

AM01471v1

Figure 17. Unclamped inductive waveform

V(BR)DSS

VD

Figure 18. Switching time waveform

ton

tdon

tr

toff

tdoff tf

VDD

IDM

ID

0

VDD

90%

10% VDS

90%

VGS

90%

10%

AM01472v1

0

10%

AM01473v1

8/14

Doc ID 7662 Rev 5

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