STD35NF06LT4 Просмотр технического описания (PDF) - STMicroelectronics

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STD35NF06LT4

N-channel 60 V, 0.014 Ω, 35 A STripFET™ II Power MOSFET in a DPAK package

STMicroelectronics 

STD35NF06L

1

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

VDS

Drain-source voltage

VDGR

Drain-gate voltage (RGS = 20 kΩ)

VGS

Gate- source voltage

ID

Drain current (continuous) at TC = 25 °C

ID

IDM(1)

Drain current (continuous) at TC = 100 °C

Drain current (pulsed)

Ptot

Total dissipation at TC = 25 °C

Derating Factor

dv/dt(2) Peak diode recovery avalanche energy

EAS (3)

Single pulse avalanche energy

Tstg

Storage temperature

Tj

Max. operating junction temperature

1. Pulse width limited by safe operating area.

2. ISD ≤ 35 A, di/dt ≤ 100 A/µs, VDD =V(BR)DSS, Tj ≤ TJMAX

3. Starting Tj = 25 °C, ID = 30 A, VDD =30 V

Table 3. Thermal data

Symbol

Parameter

Rthj-case

Rthj-amb

TJ

Thermal resistance junction-case max

Thermal resistance junction-to ambient max

Maximum lead temperature for soldering

purpose

Electrical ratings

Value

60

60

± 16

35

24.5

140

80

0.53

5

280

-55 to 175

Unit

V

V

V

A

A

A

W

W/°C

V/ns

mJ

°C

Value

1.88

100

275

Unit

°C/W

°C/W

°C

Doc ID 7662 Rev 5

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