MTP3055E Просмотр технического описания (PDF) - STMicroelectronics
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MTP3055E Datasheet PDF : 8 Pages
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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING RESISTIVE LOAD
Symbo l
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
P ar am et e r
Turn-on Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
VDD = 30 V ID = 7 A
RG = 50 Ω VGS = 10 V
(see test circuit)
ID = 12 A VGS = 10 V
VDD = 40 V
(see test circuit)
SOURCE DRAIN DIODE
Symbo l
P ar am et e r
Test Conditions
ISD
ISDM (•)
VSD (∗)
Source-drain Current
Source-drain Current
( pu ls ed)
Forward On Voltage
ISD = 12 A VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
Charge
ISD = 12 A
VDD = 30 V
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
di/dt = 100 A/µs
Tj = 150 oC
MTP3055E
Min.
Typ.
20
65
70
35
15
7
5
Max.
Unit
ns
ns
ns
ns
nC
nC
nC
Min.
Typ.
Max.
12
48
Unit
A
A
2.0
V
65
ns
0.17
µC
Safe Operating Area
Thermal Impedance
3/8
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