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STD30NE06L

N - CHANNEL 60V - 0.025 Ω - 30A TO-252 STripFET™ POWER MOSFET

STMicroelectronics 

®

STD30NE06L

N - CHANNEL 60V - 0.025 Ω - 30A TO-252

STripFET™ POWER MOSFET

TYPE

VDSS

RDS(on)

ID

STD30NE06L 60 V

< 0.03 Ω

30 A

s TYPICAL RDS(on) = 0.025 Ω

s EXCEPTIONAL dv/dt CAPABILITY

) s 100% AVALANCHE TESTED

t(s s LOW GATE CHARGE 100oC

s APPLICATION ORIENTED

c CHARACTERIZATION

du s ADD SUFFIX "T4" FOR ORDERING IN TAPE

ro ) & REEL

P t(s DESCRIPTION

te c This Power MOSFET is the latest development of

le du STMicroelectronics unique "Single Feature

so ro Size™" strip-based process. The resulting transi-

stor shows extremely high packing density for low

b P on-resistance, rugged avalanche characteristics

- O te and less critical alignment steps therefore a re-

) le markable manufacturing reproducibility.

t(s so APPLICATIONS

c b s HIGH CURRENT, HIGH SPEED SWITCHING

u O s SOLENOID AND RELAY DRIVERS

rod - s MOTOR CONTROL, AUDIO AMPLIFIERS

P t(s) s DC-DC & DC-AC CONVERTERS

3

1

DPAK

TO-252

(Suffix "T4")

INTERNAL SCHEMATIC DIAGRAM

solete roduc ABSOLUTE MAXIMUM RATINGS

b P Symbol

Parameter

O te VDS

le VDGR

o VGS

bsID

O ID

Drain-source Voltage (VGS = 0)

Drain- gate Voltage (RGS = 20 kΩ)

Gate-source Voltage

Drain Current (continuous) at Tc = 25 oC

Drain Current (continuous) at Tc = 100 oC

Value

60

60

± 20

30

21

Unit

V

V

V

A

A

IDM(•)

Ptot

Drain Current (pulsed)

Total Dissipation at Tc = 25 oC

Derating Factor

120

55

0.37

A

W

W/oC

dv/dt (1) Peak Diode Recovery voltage slope

Tstg Storage Temperature

Tj Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

7

-65 to 175

175

(1) ISD ≤30A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

V/ns

oC

oC

May 1999

1/8

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