BUZ71 Просмотр технического описания (PDF) - STMicroelectronics

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производитель

BUZ71

N - CHANNEL 50V - 0.085Ω- 17A TO-220 STripFET POWER MOSFET

STMicroelectronics 

ELECTRICAL CHARACTERISTICS (continued)

SOURCE DRAIN DIODE

Symbo l

P ar am et e r

Test Conditions

ISD

ISDM

VSD (∗)

Source-drain Current

Source-drain Current

( pu ls ed)

Forward On Voltage

ISD = 28 A VGS = 0

trr

Reverse Recovery

Time

Qrr

Reverse Recovery

Charge

ISD = 14 A

VDD = 30 V

(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

di/dt = 100 A/µs

Tj = 150 oC

BUZ71

Min.

Typ.

Max.

17

68

Unit

A

A

1.8

V

65

ns

0.17

µC

Safe Operating Area

Thermal Impedance

3/8

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