STB100NF04-1 Просмотр технического описания (PDF) - STMicroelectronics
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STB100NF04-1
STMicroelectronics
STB100NF04-1 Datasheet PDF : 15 Pages
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STP100NF04, STB100NF04, STB100NF04-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
DYNAMIC
Symbol
gfs (1)
Ciss
Coss
Crss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS = 15 V, ID = 50 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
150
5100
1300
160
Max.
Unit
S
pF
pF
pF
SWITCHING ON
Symbol
Parameter
td(on)
tr
Turn-on Delay Time
Rise Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Test Conditions
VDD = 20 V, ID = 60 A
RG = 4.7Ω VGS = 10 V
(Resistive Load see, Figure 3)
VDD = 32V, ID = 120 A,
VGS = 10V
(see, Figure 4)
Min.
Typ.
35
220
110
35
35
Max.
150
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off Delay Time
Fall Time
Test Conditions
VDD = 20 V, ID = 60 A
RG = 4.7Ω VGS = 10 V
(Resistive Load see, Figure 3)
Min.
Typ.
80
50
Max.
Unit
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 120 A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 120 A, di/dt = 100A/µs
VDD = 20V, Tj = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Min.
Typ.
75
185
5
Max.
120
480
1.3
Unit
A
A
V
ns
nC
A
3/15
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