P100NF04(2007) Просмотр технического описания (PDF) - STMicroelectronics

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Компоненты Описание

производитель

P100NF04
(Rev.:2007)

N-channel 40V - 0.0043Ω - 120A - TO-220 - D2PAK STripFET™ II Power MOSFET

STMicroelectronics 

Electrical characteristics

2

Electrical characteristics

STB100NF04 - STP100NF04

(TCASE=25°C unless otherwise specified)

Table 3. On/off

Symbol

Parameter

Test conditions

V(BR)DSS

Drain-source Breakdown

Voltage

ID=250µA, VGS=0

IDSS

Zero Gate Voltage Drain VDS=Max Rating

Current (VGS=0)

VDS=Max Rating Tc=125°C

IGSS

Gate-body Leakage

Current (VDS=0)

VGS=±20V

VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA

RDS(on)

Static Drain-source On

Resistance

VGS=10V, ID=50A

Min. Typ. Max. Unit

40

V

1 µA

10 µA

±100 nA

2

4

V

0.0043 0.0046 Ω

Table 4. Dynamic

Symbol

Parameter

Test conditions

Min Typ. Max. Unit

gfs

Ciss

Coss

Crss

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

Forward Transconductance

VDS=15V, ID=50A

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

VDS=25V, f=1MHz,VGS=0

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD=32V, ID=120A

VGS=10V

Turn-on Delay Time

Rise time

Turn-off delay Time

Fall Time

VDD=20V, ID=60A

RG=4.7Ω, VGS=10V

(see Figure 21)

150

S

5100

pF

1300

pF

160

pF

110 150 nC

35

nC

70

nC

35

ns

220

ns

80

ns

50

ns

4/17

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