STGD3NB60SDT4(2000) Просмотр технического описания (PDF) - STMicroelectronics

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STGD3NB60SDT4
(Rev.:2000)

N-CHANNEL 3A - 600V DPAK Power MESH™ IGBT

STMicroelectronics 

®

STGD3NB60SD

N-CHANNEL 3A - 600V DPAK

Power MESH™ IGBT

TYPE

VCES

VCE(sat)

IC

STGD3NB60SD 600 V < 1.5 V

3A

s HIGH INPUT IMPEDANCE

(VOLTAGE DRIVEN)

s VERY LOW ON-VOLTAGE DROP (Vcesat)

s HIGH CURRENT CAPABILITY

s OFF LOSSES INCLUDE TAIL CURRENT

s INTEGRATED FREEWHEELING DIODE

s SURFACE-MOUNTING DPAK (TO-252)

POWER PACKAGE IN TAPE & REEL

(SUFFIX "T4")

DESCRIPTION

Using the latest high voltage technology based

on a patented strip layout, STMicroelectronics

has designed an advanced family of IGBTs, the

PowerMESH™ IGBTs, with outstanding

perfomances. The suffix "S" identifies a family

optimized to achieve minimum on-voltage drop

for low frequency applications (<1kHz).

PRELIMINARY DATA

3

1

DPAK

TO-252

(Suffix "T4")

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

s GAS DISCHARGE LAMP

s STATIC RELAYS

s MOTOR CONTROL

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VCES Collector-Emitter Voltage (VGS = 0)

VGE Gate-Emitter Voltage

IC

Collector Current (continuous) at Tc = 25 oC

IC

Collector Current (continuous) at Tc = 100 oC

ICM(•)

Ptot

Collector Current (pulsed)

Total Dissipation at Tc = 25 oC

Derating Factor

Tstg Storage Temperature

Tj

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

March 2000

Value

600

± 20

6

3

25

48

0.32

-65 to 175

175

Unit

V

V

A

A

A

W

W/oC

oC

oC

1/8

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