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STS4DNFS30L Просмотр технического описания (PDF) - STMicroelectronics
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производитель
STS4DNFS30L
N-channel 30V - 0.044Ω - 4A SO-8 STripFET™ MOSFET plus SCHOTTKY rectifier
STMicroelectronics
STS4DNFS30L Datasheet PDF : 12 Pages
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STS4DNFS30L
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
I
SD
I
SDM
(1)
V
SD
(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 4A, V
GS
= 0
I
SD
= 4A, V
DD
= 15V
di/dt = 100A/µs,
T
j
= 150°C
(see Figure 14)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Min Typ. Max Unit
4
A
16 A
1.2 V
35
ns
25
nC
1.4
A
5/12
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