4DFS30L(2011) Просмотр технического описания (PDF) - STMicroelectronics

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производитель

4DFS30L
(Rev.:2011)

N-channel 30 V, 0.044 Ω, 4 A SO-8 STripFET™ MOSFET plus SCHOTTKY rectifier

STMicroelectronics 

STS4DNFS30L

Electrical characteristics

Table 8. Source drain diode

Symbol

Parameter

Test conditions

Min Typ. Max Unit

ISD Source-drain current

4

A

ISDM (1) Source-drain current (pulsed)

16 A

VSD (2) Forward on voltage

ISD = 4A, VGS = 0

1.2 V

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 4A, VDD = 15V

di/dt = 100A/µs,

Tj = 150°C

(see Figure 15)

35

ns

25

nC

1.4

A

1. Pulse width limited by safe operating area.

Obsolete Product(s) - Obsolete Product(s) 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Doc ID 8566 Rev 5

5/13

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