4DFS30L(2011) Просмотр технического описания (PDF) - STMicroelectronics

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производитель

4DFS30L
(Rev.:2011)

N-channel 30 V, 0.044 Ω, 4 A SO-8 STripFET™ MOSFET plus SCHOTTKY rectifier

STMicroelectronics 

STS4DNFS30L

1

Electrical ratings

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS Drain-source voltage (vgs = 0)

30

V

VDGR Drain-gate voltage (RGS = 20 kΩ)

30

V

VGS Gate- source voltage

±16

V

ID

Drain current (continuous) at TC = 25°C

4

A

ID

t(s) IDM (1)

Drain current (continuous) at TC = 100°C

Drain current (pulsed)

c PTOT Total dissipation at TC = 25°C dual operation

u 1. Pulse width limited by safe operating area.

Prod Table 3.

lete Symbol

Schottky absolute maximum ratings

Parameter

bso VRRM

Repetitive peak reverse

voltage

O IF(RMS) RMS forward current

t(s) - IF(AV) Average forward current

TL=125°C

δ=0.5

uc IFSM

Surge non repetitive forward

current

tp = 10 ms

Sinusoidal

rod tp = 2 µs

IRRM

Repetitive peak reverse current

F=1 kHz

te P IRSM

Non repetitive peak reverse

current

tp = 100 µs

Obsole dv/dt

Critical rate of rise of reverse

voltage

2.5

A

16

A

2

W

Value

Unit

30

V

20

A

3

A

75

A

1

A

1

A

10000

V/µs

Table 4.

Symbol

Thermal data

Parameter

Rthj-a

Thermal resistance junction-ambient

MOSFET(1)

TJ Junction temperature

Tstg Storage temperature range

1. Mounted on FR-4 board (steady state).

Value

62.5

-55 to 150

-55 to 150

Unit

°C/W

°C/W

°C

°C

Doc ID 8566 Rev 5

3/13

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