STB60NE03L-12 Просмотр технического описания (PDF) - STMicroelectronics

Номер в каталоге

Компоненты Описание

производитель

STB60NE03L-12

N - CHANNEL 30V - 0.009 Ω - 60A - D2PAK "SINGLE FEATURE SIZE™" POWER MOSFET

STMicroelectronics 

®

STB60NE03L-12

N - CHANNEL 30V - 0.009 Ω - 60A - D2PAK

"SINGLE FEATURE SIZE™ " POWER MOSFET

TYPE

VDSS

RDS(on)

ID

STB60NE03L-12 30 V <0.012 Ω

60 A

s TYPICAL RDS(on) = 0.009 Ω

s AVALANCE RUGGED TECHNOLOGY

s 100% AVALANCHE TESTED

s REPETITIVE AVALANCHE DATA AT 100oC

s LOW GATE CHARGE

s HIGH CURRENT CAPABILITY

s 175oC OPERATING TEMPERATURE

s APPLICATION ORIENTED

CHARACTERIZATION

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronics unique "Single Feature

Size™ " strip-based process. The resulting

transistor shows extremely high packing density

for low on-resistance, rugged avalanche

characteristics and less critical alignment steps

therefore a remarkable manufacturing

reproducibility.

PRELIMINARY DATA

3

1

D2PAK

TO-263

(Suffix "T4")

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

s HIGH CURRENT, HIGH SPEED SWITCHING

s SOLENOID AND RELAY DRIVERS

s DC-DC & DC-AC CONVERTER

s AUTOMOTIVE ENVIRONMENT

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VDS Drain-source Voltage (VGS = 0)

VDGR

VGS

ID

ID

Drain- gate Voltage (RGS = 20 kΩ)

Gate-source Voltage

Drain Current (continuous) at Tc = 25 oC

Drain Current (continuous) at Tc = 100 oC

IDM(•)

Ptot

Drain Current (pulsed)

Total Dissipation at Tc = 25 oC

Derating Factor

dv/dt Peak Diode Recovery voltage slope

Tstg Storage Temperature

Tj

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

July 1998

Value

Unit

30

V

30

V

± 20

V

60

A

42

A

240

A

100

0.67

W

W/oC

7

V/ns

-65 to 175

oC

175

oC

(1) ISD ≤ 60 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

1/5

Share Link: