STB70NF03L(2006) Просмотр технического описания (PDF) - STMicroelectronics
Номер в каталоге
Компоненты Описание
производитель
STB70NF03L
(Rev.:2006)
(Rev.:2006)
STMicroelectronics
STB70NF03L Datasheet PDF : 15 Pages
| |||
STB70NF03L - STP70NF03L - STB70NF03L-1
Electrical characteristics
Table 5. Switching times
Symbol
Parameter
td(on)
tr
Turn-on delay time
Rise time
Qg
Qgs
Qgd
td(off)
tf
Total gate charge
Gate-source charge
Gate-drain charge
Turn-off delay time
Fall time
Test conditions
Min
VDD = 15V
RG = 4.7Ω
Figure 16.
ID = 35A
VGS = 5V
VDD= 15V ID= 70A
VGS= 5V
VDD = 15V
RG = 4.7Ω,
Figure 16.
ID = 35A
VGS = 5V
Typ
22
165
22.5
9
12
21
25
Max
30
Unit
ns
ns
nC
nC
nC
ns
ns
Table 6. Source drain diode
Symbol
Parameter
Test conditions
Min Typ Max Unit
ISD
ISDM(1)
Source-drain current
Source-drain current
(pulsed)
VSD (2) Forward on voltage
ISD = 70A
VGS = 0
trr
Qrr
IRRM
Reverse recovery time ISD = 70A di/dt = 100A/µs
Reverse recovery charge VDD = 20V TJ = 150°C
Reverse recovery current Figure 15.
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
70
A
280 A
1.3
V
42
ns
52
nC
2.5
A
5/15
Share Link: