STB70NF03L(2006) Просмотр технического описания (PDF) - STMicroelectronics

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производитель

STB70NF03L
(Rev.:2006)

N-channel 30V - 0.0075Ω - 70A - D2PAK - I2PAK - TO-220 Low gate charge STripFET™ II Power MOSFET

STMicroelectronics 

Electrical characteristics

STB70NF03L - STP70NF03L - STB70NF03L-1

2

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 3. ON/OFF states

Symbol

Parameter

Test conditions

Min Typ Max Unit

Drain-source

V(BR)DSS Breakdown voltage

ID = 250µA, VGS = 0

30

V

Zero gate voltage

VDS = Max rating

IDSS Drain current (VGS = 0) VDS = Max rating

TC = 125°C

1

µA

10

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 18V

±100 nA

VGS(th) Gate threshold voltage VDS = VGS

ID = 250µA 1

V

RDS(on)

Static drain-source on

resistance

VGS = 10 V

VGS = 5 V

ID = 35A

ID = 18A

0.0075 0.0095 W

0.0135 0.018 W

Table 4.

Symbol

Dynamic

Parameter

gfs (*)

Ciss

Coss

Crss

Forward

transconductance

Input capacitance

Output capacitance

Reverse transfer

capacitance

Test conditions

Min Typ Max Unit

VDS = 15V

ID = 35A

25

S

1440

pF

VDS = 25V f = 1 MHz VGS = 0

560

135

pF

pF

4/15

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